Micron releases new DDR3Lm memory main low power

Micron released a new low-power DDR3 memory solution, DDR3Lm, on the mobile market such as tablet computers and ultra-thin notebooks on Wednesday. The first batch of products, including 2Gb and 4Gb, announced that they can provide longer life time for mobile products and still have good performance and high cost performance.

The first is 2Gb DDR3Lm. Compared to the standard 2Gb DDR3L (low-voltage DDR3) chip, its power consumption can be reduced by about 50% with a maximum frequency of 1600MHz. The 4Gb DDR3Lm also features low power consumption, and consumes only 3.7mA IDD6 in standby mode, with a maximum frequency of 1866MHz. Both have adopted Micron's new 30nm process to further optimize power consumption and performance, making it ideal for mobile products such as ultra-thin notebooks and tablets.

Robert Feurle, vice president of DRAM Marketing at Micron, said that for the current rapid development of ultra-thin mobile market, the role of low power consumption is particularly prominent. And Micron has accumulated a lot of experience in the traditional PC memory, these provide consumers with high-performance and cost-effective products. And it is our commitment to consumers and our leadership in memory technology that brings this successful 30nm process product.

Currently, Micron has come up with samples of DDR3Lm memory and is expected to mass-produce it in the second quarter of 2012. Intel is already preparing to provide support for this product and will encourage its partners to use Atom-based tablets and Ultra thin and light use DDR3Lm memory.

Geof Findley, Intel’s manager of memory management, also stated that current computing is increasingly mobile, low power consumption and longer battery life are increasingly valuable to users, and this is also the right direction for future memory.